The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Oct. 29, 2001
Hirokazu Sayama, Tokyo, JP;
Yoshinori Okumura, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device manufacturing method for manufacturing a semiconductor device of constant finished dimensions as designed even when a material which is difficult to increase etch selectivity to a silicon film in a gate electrode or wiring structure is used for an anti-reflection coating, and which is also capable of achieving finer patterning through the use of a silicon oxide film or the like as a hard mask. For example, a silicon oxy-nitride film and a silicon oxide film are used for an anti-reflection coating and a hard mask, respectively, to provide etch selectivity therebetween. In etching of the anti-reflection coating and the hard mask, the hard mask such as a silicon oxide film is not completely etched in order to leave a non-single crystalline silicon film covered, under which condition the anti-reflection coating is removed.