The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Jul. 01, 2002
Yasunori Yamashita, Tokyo, JP;
Kenichi Hatasako, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device which reduces the number of impurity implantations. A buffer film for reducing a quantity of an impurity implantation is provided adjacent to an MIS gate structure over a surface of a semiconductor substrate, and an impurity implantation is carried out over the semiconductor substrate, through the buffer film in a first predetermined region in which the buffer film is provided and directly in a second predetermined region of the substrate. An impurity concentration is reduced in a the first predetermined region in which the impurity implantation is carried out through the buffer film, while the impurity concentration is increased in the second predetermined region in which the buffer film is not provided. Accordingly, a plurality of regions having different impurity concentrations are formed as a source/drain of an MISFET by a one-time impurity implantation. Consequently, the number of the impurity implantations is reduced.