The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Aug. 07, 2001
Nobuyuki Sekikawa, Niigata, JP;
Koichi Hirata, Niigata, JP;
Wataru Andoh, Niigata, JP;
Noriyasu Katagiri, Niigata, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
To shorten the production process of the semiconductor device having the capacitance element. The pad oxide film ( ) and the first polycrystalline silicon layer ( ) are used as a stress buffering material at the time of formation of the element separation oxide film. These are not removed and used as the capacitance insulation film and a portion of the upper electrode of the capacitance element. Thereby, the removing process of the pad•polycrystalline silicon layer, and the dummy oxidation and its removing process in the conventional example, can be omitted and the process can be shortened. Further, a problem of the impurity enhanced oxidation at the time of formation of the capacitance insulation film can be solved.