The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Jan. 03, 2002
Applicant:
Inventors:
Chi-shen Lee, Hsinchu, TW;
Ting-Kuo Chang, Hsinchu, TW;
Pi-Fu Chen, Taipei Hsien, TW;
Yu-Ming Kang, Chupei, TW;
Yuan-Tung Dai, Chung Li, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si-Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.