The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Mar. 14, 2002
Integrated circuit having an eeprom and flash eprom using a memory cell with source-side programming
Eungjoon Park, Fremont, CA (US);
Ali Pourkeramati, Redwood City, CA (US);
Azalea Microelectronics Corporation, Santa Clara, CA (US);
Abstract
In accordance with one embodiment of the present invention, a non-volatile integrated circuit memory includes a flash EPROM array having a first plurality of memory cells, and an EEPROM array having a second plurality of memory cells arranged along rows and columns. Each of the first and second plurality of memory cells has a drain region spaced apart from a source region to form a channel region therebetween. The drain region has a greater depth than the source region. Each memory cell further has a floating gate and a select gate. The EEPROM array further includes a plurality of data lines each being coupled to the drain regions of a plurality of cells along at least a portion of a column of cells, and a plurality of source lines each being coupled to the source regions of a plurality of cells along at least a portion of a row of cells.