The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Mar. 15, 2002
Applicant:
Inventors:
Hidetoshi Koike, Yokohama, JP;
Tomoya Sanuki, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/708 ;
U.S. Cl.
CPC ...
H01L 2/708 ;
Abstract
Since at least a portion of a trench capacitor electrode is formed by a metal, the electrical sheet resistance of the electrode can be lowered, and the signal propagation time prolonged by CR delay can be shortened. This can reduce the read/write time. The formation of a buried gate electrode can realize a reduction of the cell area, which is required in a DRAM- and a DRAM/logic-embedded device. This can increase the gate length and reduce the short channel effect. Since an insulating protective film is deposited on the gate electrode, a bit line contact can be formed in self-alignment.