The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Oct. 30, 2002
Hiroyuki Tomita, Hitachi, JP;
Kazuo Mera, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Heat energy produced for heating is absorbed into a silicon wafer, and the thermal deformation of the silicon wafer is prevented. An ion implanting apparatus comprises an ion source for producing an ion beam; a process chamber for containing the silicon wafer; a rotating body disposed and rotated in the process chamber; a holding means for holding the silicon wafer of an object to be ion-implanted with a spacing between an ion implanted area of the object to be ion-implanted and the holding means, the holding means being connected to the rotating body; and a heating means for heating the silicon wafer in the process chamber, wherein the holding means holds the silicon wafer in a state in contact with a part of a region in an outer peripheral side of the silicon wafer, and blocks the silicon wafer to move toward an acting direction of a centrifugal force.