The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Oct. 12, 2000
Richard A. Metzler, Mission Viejo, CA (US);
VRAM Technologies, LLC, Costa Mesa, CA (US);
Abstract
A process of forming fine repetitive geometries using a mask having large mask dimensions. The pitch of the masking pattern on the mask is divided by the process to obtain a smaller pitch in the fine repetitive geometries. At least two working materials are used one of which can be etched without etching a substrate. In one embodiment the two working materials and the substrate are each etched independently. In other embodiments, the substrate and one working material have similar etch rates while the other material is etched independently. Pedestals are formed having an initial pitch. First sidewalls are formed around the pedestals. The pedestals are removed and a second and third sidewall are formed on the inside and outside surfaces of the first sidewall having spaces there-between. The first sidewall is removed generating another space between the second and third sidewall. The spaces and the widths of the second and third sidewalls form final pitches substantially smaller than the initial pitch of the pedestals. The process can be used in semiconductor manufacturing processes as well as other fields. Various geometric shapes for patterning by the method are disclosed.