The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Nov. 12, 2002
Toshiharu Watanabe, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A non-volatile semiconductor memory device comprising a device isolation insulation layer, formed on a semiconductor substrate, for defining a device region, a floating gate formed on the device region and having a pair of first side faces opposed to a side face of the device isolation insulation layer, which the side face is located on the device region side, a control gate formed above the floating gate, and a booster electrode having faces opposed to a pair of second surfaces which are substantially perpendicular to the pair of first side faces. A distance between the pair of first side faces of the floating gate is less than a width of the device region defined by the device isolation insulation layer.