The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Feb. 04, 2002
Applicant:
Inventor:
Ercan Adem, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/652 ;
U.S. Cl.
CPC ...
C23C 1/652 ;
Abstract
A novel method is provided for in situ monitoring of a film being deposited on a wafer for manufacturing a semiconductor device. The method involves producing an incident beam of radiation directed during a deposition process to a film being deposited on a wafer in a deposition reactor. The Raman scattered radiation resulted from interaction of the incident beam with molecules of the deposited film is detected to produce a Raman spectrum of the deposited film.
Adem, Ercan. (2003). Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy (U.S. Patent No. 6667070). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6667070
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile