The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
May. 30, 2002
Applicant:
Inventor:
Hitoshi Haematsu, Yamanashi, JP;
Assignee:
Fujitsu-Quantum Devices Limited, Yamanashi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/3053 ; H01L 2/312 ;
U.S. Cl.
CPC ...
H01L 2/3053 ; H01L 2/312 ;
Abstract
A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulating film are covered with a metal protective film. Via hole receiving pads connected to the source electrode, the gate electrode, and the drain electrode are respectively connected to bonding pads on a reveres face of the semiconductor substrate through via holes.