The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
May. 21, 2002
Junichi Karasawa, Tatsuno-machi, JP;
Kunio Watanabe, Sakata, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor device having a memory cell including first and second load transistors, first and second driver transistors, and first and second transfer transistors. The semiconductor device includes a first gate-gate electrode layer and a first drain-gate wiring layer. A distance L between the edges of the first drain-gate wiring layer and an active region of the first driver transistor is greater than or equal to a distance L between the first drain-gate wiring layer and an active region of the first load transistor. This structure provides semiconductor devices in which memory cells having desired characteristics can be readily fabricated. The invention also provides memory systems and electronic apparatuses which include the above semiconductor devices.