The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Jul. 15, 2002
Tomohiro Yamashita, Tokyo, JP;
Masashi Kitazawa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An object of the invention is to suppress degradation of the effective isolation width between a well and a diffusion layer caused by impurity ion implantation for forming the well performed at a predetermined incident angle. A well is formed by performing impurity ion implantation twice: first impurity ion implantation from a first direction at predetermined incident angle, acceleration voltage and dose; and second impurity ion implantation from a second direction different from the first direction by 180 degrees in a plan view at the same incident angle, acceleration voltage and dose as those in the first impurity ion implantation.