The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Mar. 24, 2000
Chong-man Yun, Seoul, KR;
Tae-hoon Kim, Kyungki-do, KR;
Fairchild Korea Semiconductor Ltd., Buchun, KR;
Abstract
A power MOSFET is provided. In this power MOSFET, a drift region is formed on a drain region having the same conductivity type as that of the drain region using a semiconductor substrate of a first conductivity type. A gate electrode is formed on the drift region, having a plurality of openings spaced apart from each other by a predetermined distance. The plurality of openings partially expose the drift region, and a gate insulating layer is interposed between the gate electrode and the drift region. A body region of a second conductivity type opposite to the first conductivity type is formed on a predetermined upper region of the drift region and extends from the opening to have a side overlapped by the gate electrode. A channel in the portion of the body region overlapped by the gate electrode is not formed and is adjacent to at least two facing sides of the opening. A source region is formed in the body region, including a first source region shaped in the form of a strip, the first source region contacting a portion where a channel is formed, and a second source region connecting the first source regions facing to each other. Also, a source electrode is electrically connected to the source region, and a drain electrode is electrically connected to the drain region.