The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Mar. 27, 2000
Applicant:
Inventors:
Takafumi Yao, Aoba-Ku, Sendai City, Miyagi Pref., JP;
Meoung-Whan Cho, Sendai, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ; H01L 3/300 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/715 ; H01L 3/300 ; H01L 2/348 ;
Abstract
A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The device includes a contact layer composed of p-BeTe and a cap layer is composed of p-ZnSe. The cap layer is positioned on the contact layer and an electrode sits atop the cap layer. Preferably, the thickness of the cap layer is 30 to 70 Å and the electrode is composed of gold or gold is dispersed in the cap layer.