The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6664181 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 16, 2003

Filed:

Dec. 02, 2002
Applicant:
Inventor:

Kenshi Kanegae, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A peeling film is deposited on an insulating film, which is formed on a semiconductor substrate and has a hole, and on the bottom and the wall of the hole so as not to fill the hole with the peeling film. A resist film is formed over the peeling film so as to fill the hole. A resist pattern is formed by patterning the resist film so as to form an interconnect groove opening around the hole and to allow a portion of the resist film to remain within the hole. The peeling film and the insulating film are etched by using the resist pattern as a mask, so as to form an interconnect groove continuous with the hole in the insulating film. After removing the resist pattern, a remaining portion of the peeling film is removed.


Find Patent Forward Citations

Kanegae, Kenshi. (2003). Method for fabricating semiconductor device (U.S. Patent No. 6664181). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6664181

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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