The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Oct. 01, 2002
Kazuhide Koyama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
There is provided a semiconductor apparatus, and a fabrication method thereof, which are improved such that a reduction in concentration at the SOI active layer is prevented, and a parasitic MOSFET is not formed even in cases where Mesa-type isolation techniques and the STI isolation method are applied to form a MOSFET in an SOI layer. In an isolation step for separating and forming a plurality of device regions, a layered film of a nitride film (Si N ) and an oxide film (SiO ) is taken as an isolation mask, and a semiconductor layer (SOI layer) is removed from the isolation region by etching. Subsequently, a SiON film ( ) is formed on a sidewall surface of an SOI layer ( ) by a nitridation oxidation process. Thereafter, isolation is performed by the STI method. Finally, an oxide film ( ) and an electrode ( ) are formed, and a MOSFET is completed.