The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6664118 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 16, 2003

Filed:

Oct. 11, 2002
Applicant:
Inventors:

Toshiyuki Nishihara, Shinagawa-ku, Tokyo 141, JP;

Koji Watanabe, Shinagawa-ku, Tokyo 141, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

A ferroelectric-type nonvolatile semiconductor memory comprising (A) a bit line, (B) a transistor for selection, (C) memory units in the number of N, each memory unit comprising memory cells in the number of M wherein N≧2 and M≧2, and (D) plate lines in the number of M×N, in which the memory units in the number of N are stacked through an insulating interlayer, each memory cell comprises a first electrode, a ferroelectric layer and a second electrode, the first electrodes are in common in each memory unit, and the common first electrode is connected to the bit line through the transistor for selection, and the second electrode of the m-th memory cell in the n-th memory unit is connected to the [(n−1)M+m]-th plate line wherein m=1, 2 . . . M and n=1, 2 . . . N.


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Nishihara, Toshiyuki. (2003). Ferroelectric-type nonvolatile semiconductor memory and operation method thereof (U.S. Patent No. 6664118). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6664118

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