The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2003

Filed:

Aug. 18, 1998
Applicant:
Inventor:

Kiichi Hamamoto, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/10 ;
U.S. Cl.
CPC ...
G02B 6/10 ;
Abstract

A semiconductor waveguide photodetector having a high receiving efficiency has single mode light transmitted as the incident light signal. The semiconductor waveguide photodetector includes a 1×1 multi mode interference (MMI) light waveguide region, and two single mode waveguide regions, each of which is connected at an end to the multi mode region. The length of the multi mode waveguide region is about 100 &mgr;m and the lengths of the single mode waveguide region are about 10 &mgr;m. The width of multimode waveguide region is 6 &mgr;m and those of single mode waveguide regions are 1.5 &mgr;m. The semiconductor waveguide photodetector detects and filters the incident light in the same material within the multiple mode region.


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