The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Feb. 20, 2001
Kyusik Sin, Palo Alto, CA (US);
Ming Mao, Pleasanton, CA (US);
Hua-Ching Tong, San Jose, CA (US);
Chester Xiaowen Chien, San Jose, CA (US);
Other;
Abstract
A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (Cr O ) or niobium oxide (NbO ). The chromium oxide material (Cr O ) can be, for example: Cr O , Cr O , CrO , CrO , Cr O , Cr O , other stoichiometry, or any combination thereof. The niobium oxide (NbO ) can be, for example: NbO, NbO , Nb O , Nb O , Nb O , Nb O , other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.