The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Aug. 16, 2001
Andy L. Lee, San Jose, CA (US);
Wanli Chang, Saratoga, CA (US);
Cameron McClintock, Mountain View, CA (US);
John E. Turner, Santa Cruz, CA (US);
Brian D. Johnson, Sunnyvale, CA (US);
Chiao Kai Hwang, Fremont, CA (US);
Richard Yen-Hsiang Chang, Palo Alto, CA (US);
Richard G. Cliff, Los Altos, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of V on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the V −V limit for signals propagated through NMOS passgates is raised by applying a higher V ; in another arrangement, the V is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.