The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Feb. 28, 2002
Kouji Azuma, Tokyo, JP;
Yousuke Miyoshi, Tokyo, JP;
Fumio Harima, Tokyo, JP;
Masahiro Tanomura, Tokyo, JP;
Hidenori Shimawaki, Tokyo, JP;
NEC Compound Semiconductor Devices, Ltd., Kawasaki, JP;
Abstract
A semiconductor device of the present invention includes a systematic structure layer of first conductivity type and having a systematically arranged structure. The systematic structure layer is formed on a collector contact layer of first conductivity type, which is connected to collector electrodes. A compensation layer of first conductivity type is formed on the systematic structure layer. A collector layer of first conductivity type is formed on the compensation layer. A base layer is formed on the collector layer and connected to base electrodes. An emitter layer is formed on the base electrode and connected to an emitter electrode. The semiconductor device reduces collector resistance and thereby improves reliability.