The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2003

Filed:

Nov. 07, 2002
Applicant:
Inventors:

Yung Shan Chang, Plano, TX (US);

Theodore S. Moise, IV, Dallas, TX (US);

Scott R. Summerfelt, Garland, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract

One aspect of the invention relates to a method of manufacturing a semiconductor device in which an alignment mark is formed by a plurality of adjacent filled trenches. A processing tool detects the trenches as though they were a single filled trench of larger dimension. When the trenches are metal filled, the metal is more easily protected from oxidation than when the metal is formed into a single large trench, an effect that is pronounced when the trenches are filled with tungsten. Another aspect of the invention relates to an alignment mark formed by a plurality of tungsten filled trenches. The alignment mark can be used to align the pattern for an FeRAM capacitor stack to underlying tungsten contacts.


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