The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Aug. 27, 2001
Satoe Miyata, Soraku-sun, JP;
Hiroyuki Umimoto, Takarazuka, JP;
Michikazu Matsumoto, Usi, JP;
Susumu Akamatsu, Katano, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Ions of boron as a dopant are implanted using a gate electrode and an isolation film as a mask, thereby forming an ion-implanted layer as a prototype for an extended heavily doped layer. In this process step, a peak concentration of the dopant existing in the ion-implanted layer is set close to, and equal to or less than, a solid solubility at a process temperature for a first annealing process. Then, almost all of the dopant existing in the extended heavily doped layer is activated by performing the first annealing process. Thereafter, a sidewall and an ion-implanted layer as a prototype for a heavily doped source/drain layer are formed, and then the heavily doped source/drain layer is defined by performing a second RTA process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile