The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Mar. 13, 2002
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A process for manufacturing a semiconductor device includes the following steps applied to a semiconductor substrate having, on its main surface, a plurality of separation oxide films, formed in stripes parallel to each other, and gate oxide films formed in the regions placed between separation oxide films, wherein pieces of a polysilicon layer are formed so as to extend from areas above gate oxide films to areas above portions of separation oxide films on both sides of the gate oxide films and wherein a first resist is formed so as to cover the top surfaces of polysilicon layer: the injection step of injecting an impurity into polysilicon layer above separation oxide films; and the thermal diffusion step of carrying out a heat processing so that the injected impurity diffuses to the regions above gate oxide films within polysilicon layer.