The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Sep. 03, 2002
Masatoshi Kimura, Tokyo, JP;
Yasuyuki Endo, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Photolithography is used to form a photoresist ( ) having an opening over an end portion of a gate structure ( ) and over a region adjacent to the gate structure ( ) where a photodiode ( ) is to be formed. Next, using the photoresist ( ) as an implantation mask, vertical implantation of N-type impurities ( ) such as phosphorus is performed at an energy of 300 to 600 keV and a dose of 1E12 to 1E14 ions/cm , thereby forming an N-type impurity-introduced region ( ) in an upper surface of a P well ( ). At this time, the N-type impurities ( ) can penetrate through the gate structure ( ) to enter into the P well ( ), allowing the N-type impurity-introduced region ( ) to be also formed under the gate structure ( ).