The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Apr. 26, 1999
Xiao-Dong Xiang, Alameda, CA (US);
Hauyee Chang, Berkeley, CA (US);
Chen Gao, Berkeley, CA (US);
Ichiro Takeuchi, Albany, CA (US);
Peter G. Schultz, Oakland, CA (US);
U.S. Department of Energy, Washington, DC (US);
Abstract
A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba Sr )TiO , where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba Sr )TiO and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO , the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO , the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.