The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Jul. 27, 1999
Applicant:
Inventors:
Peter Rose, Boulder Creek, CA (US);
Eugene Lopata, Scotts Valley, CA (US);
John Felts, Alameda, CA (US);
Assignee:
ASML US, Inc., Scotts Valley, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 ;
U.S. Cl.
CPC ...
B32B 9/00 ;
Abstract
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.