The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Jan. 11, 2002
Justin F. Gaynor, San Jose, CA (US);
Patrick Vancleemput, Sunnyvale, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Structure-directing agents, such as quaternary ammonium, are removed from silicalite or zeolite crystals by oxidative attack (e.g., using CO , H O or NH ) first, by using a combination of ammonia, water and hydrogen peroxide at an elevated temperature; second, by using choline, hydrogen peroxide and a surfactant; third, by using ozonated water; and fourth, by exposing the crystals to an oxygen-containing plasma. Thin porous films of silicalite or zeolite crystals are useful, for example, in forming low dielectric constant insulating layers in semiconductor chip fabrication. In order for the silicalite or zeolite crystals to form a low dielectric constant film, however, the entrained molecules of the structure-directing agent must be removed.