The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6657735 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 02, 2003

Filed:

Aug. 17, 2001
Applicant:
Inventors:

Tomonobu Noda, Yokohama, JP;

Tatsuo Akiyama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 1/114 ;
U.S. Cl.
CPC ...
G01B 1/114 ;
Abstract

Critical location information is used for providing a critical location evaluation method for a semiconductor apparatus pattern. The critical location information includes coordinate information about the critical location and characteristic information indicating a thinning direction and a magnitude thereof at the critical location. Use of this evaluation method can accurately evaluate specification and analysis of thinning or a pattern which makes it difficult to pinpoint a critical location through the visual inspection.


Find Patent Forward Citations

Noda, Tomonobu. (2003). Method of evaluating critical locations on a semiconductor apparatus pattern (U.S. Patent No. 6657735). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6657735

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