The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
May. 14, 2002
Yoji Nishio, Hitachi, JP;
Kosaku Hirose, Higashimurayama, JP;
Hideo Hara, Akigawa, JP;
Katsunori Koike, Hitachi, JP;
Kayoko Nemoto, Hitachi, JP;
Tatsumi Yamauchi, Hitachioota, JP;
Fumio Murabayashi, Urizura-machi, JP;
Hiromichi Yamada, Hadano, JP;
Other;
Abstract
A semiconductor integrated circuit device, responsive to an input signal having a low amplitude and short transition time, operates with low power consumption and prevents the flow of breakthrough current. In an example circuit thereof, the input signal is transmitted through an NMOS pass transistor to the gate of a first NMOS transistor and is applied, through a second NMOS transistor, to the gate of a first PMOS transistor, the first PMOS transistor performing complementary operation with the first NMOS transistor through the second NMOS transistor; the gate of the first PMOS transistor is connected to the power supply potential through the second PMOS transistor; the gate of the second NMOS transistor is connected to the power supply potential; and the gate of the second PMOS transistor is controlled by the signal at a common drain connection of the first NMOS and first PMOS transistors.