The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Nov. 09, 2001
Applicant:
Inventors:
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ; H01L 2/915 ;
U.S. Cl.
CPC ...
H01L 2/9788 ; H01L 2/915 ;
Abstract
Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating layer on the first insulating layer at least once, and (3) agglomerating each of the conductive layers to form quantized dot layers.
Quick Actions:
Kim, Ki. (2003). Memory of multilevel quantum dot structure and method for fabricating the same (U.S. Patent No. 6657253). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6657253
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile