The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Jul. 19, 2001
Takuo Tamura, Tokyo, JP;
Kiyoshi Ogata, Tokyo, JP;
Yoichi Takahara, Tokyo, JP;
Kazuhiko Horikoshi, Tokyo, JP;
Hironaru Yamaguchi, Tokyo, JP;
Makoto Ohkura, Tokyo, JP;
Hironobu Abe, Tokyo, JP;
Masakazu Saitou, Tokyo, JP;
Yoshinobu Kimura, Tokyo, JP;
Toshihiko Itoga, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm /Vs or above.