The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Apr. 26, 2001
Satoru Isogai, Tokyo, JP;
Other;
Abstract
A semiconductor device is fabricated by forming a first insulating layer, in which an etch stopper and a first contact plug are formed so that the etch stopper surrounds an end portion of the first contact plug and the latter extends through the first insulating layer across its opposite surfaces. On the first insulating layer is formed a second insulating layer which is selectively etched to form a throughhole extending downwards to the end portion of the first contact plug. A second contact plug is formed in the throughhole to establish a direct electrical connection with the first contact plug. Due to the presence of the etch stopper, the throughhole can be aligned with an increased margin of tolerances.