The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Mar. 16, 2001
LG Electronics Inc., Seoul, KR;
Abstract
Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as Al Ga N and In Ga N. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.