The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Dec. 19, 2002
Applicant:
Inventors:
Hiroshi Iwata, Nara-ken, JP;
Seizo Kakimoto, Nara-ken, JP;
Masayuki Nakano, Nara, JP;
Kouichiro Adachi, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide film at a first face, a portion of the source/drain regions being located above the first face. The electrode is in contact with the source/drain region at a second face, the second face constituting an angle with respect to the first face.