The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Dec. 27, 2001
Capacitor for highly-integrated semiconductor memory devices and a method for manufacturing the same
Kee Jeung Lee, Seoul, KR;
Byung Seop Hong, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
The present invention relates to a capacitor structure suitable for semiconductor devices and a method for manufacturing such capacitors for highly-integrated memory devices using a TaON dielectric layer having a high dielectric constant. The capacitor is produced on a semiconductor substrate by forming an insulating interlayer on the substrate, forming a contact hole through the insulating interlayer, forming a contact plug in the contact hole, forming a lower electrode with MPS that is electrically connected to the contact plug, doping the lower electrode, forming a TaON dielectric layer on the lower electrode, annealing the TaON dielectric layer, and forming an upper electrode layer on the TaON dielectric layer.