The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Jun. 21, 2002
Takashi Miida, Kanagawa, JP;
Innotech Corporation, , JP;
Abstract
A first buried layer of one conductivity and a first well region of opposite conductivity are formed in a semiconductor layer using a first mask. A second mask is used to form a second buried layer and a second well region of the opposite conductivity and to introduce impurity of the one conductivity type into a surface of the second well to form a channel doped layer of the one conductivity. A high concentration buried layer of the opposite conductivity is formed by introducing opposite conductivity impurity into the second well region using a third mask. A gate insulating film is formed on the semiconductor layer by thermal oxidation. A source region and a drain region of the one conductivity type are formed on the surface of the second well region, on both sides of a gate electrode.