The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Sep. 25, 2000
Applicant:
Inventor:
Kazuhito Matsukawa, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
A semiconductor substrate that suppresses not only auto doping but also warpage can be provided by disposing an oxide film ( ) at a position in a semiconductor substrate ( ), so as to be apart from a main surface ( ) and a reverse surface ( ). The oxide film ( ) can be so disposed that it is apart not less than 200 nm from the reverse surface ( ), and extends throughout the semiconductor substrate ( ) in a thickness of 400 to 1000 nm, by implanting oxygen ion from the reverse surface ( ), followed by annealing.