The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Nov. 13, 2000
Applicant:
Inventor:
Makoto Ohkawa, Kariya, JP;
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
When an SOI substrate composed of a support wafer and an element formation wafer that are bonded together with an insulating film interposed therebetween is polished from a surface of the element formation wafer, a thickness of the element formation wafer is measured based on a relation between an intensity and a wavelength of a light that is irradiated to the SOI substrate from a side of the support wafer and is reflected by the SOI substrate. Thus, the measurement of the thickness of the element formation wafer can be performed simultaneouly with the polishing of the SOI substrate.