The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2003

Filed:

Sep. 26, 2002
Applicant:
Inventors:

Yoichi Takahashi, Tokyo, JP;

Nobuhito Toyama, Tokyo, JP;

Hiroyuki Matsui, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 ;
U.S. Cl.
CPC ...
G03F 1/00 ;
Abstract

The method of forming a minute focusing lens with respect to over a photoactive area of an image sensor such as a CCD or CMOS, comprising: coating a resist film on a flattening layer formed over the photoactive area of the image sensor; exposing the resist film to light via a photo-mask, and developing the resist film; and patterning the resist film into a lens configuration provides in this invention in order to form a lens having a designed configuration that provides a good light focusing efficiency. The photo-mask is a light transmission type having no light-shading layer. And, this photo-mask is the one having provided thereon a light transmission portion comprising a light refraction material, having on its surface portion a stairs portion, the stairs portion having the phase of a transmission light at its respective position controlled relative to a prescribed width so that a desired light intensity distribution may be obtained at the surface of the photo-mask light-exposed portion.


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