The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Aug. 30, 2001
Kunio Takeuchi, Jyoyo, JP;
Ryoji Hiroyama, Kyotanabe, JP;
Shigeyuki Okamoto, Kobe, JP;
Koji Tominaga, Hirakata, JP;
Yasuhiko Nomura, Moriguchi, JP;
Daijiro Inoue, Kyoto, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile