The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Dec. 10, 2001
Weon Hwa Jeong, Seoul, KR;
Hynix Semiconductor Inc., Kyungki-do, KR;
Abstract
The present invention relates to a flash memory device. The flash memory device comprises a flash memory cell array; a multiplexer for selecting bit lines of said flash memory cell array; a decoder for selecting word lines of said flash memory cell array depending on global word line signals, a control signal, local word line signals and pre-decoding signals; an internal voltage generator for generating a given internal voltage; and a source control unit for applying the internal voltage from said internal voltage generator to sources of a not-selected flash memory cell depending on the global word line signals, a sector program signal, a sector coding signal and a readout signal. Therefore, the present invention can increase the threshold voltage of a not-selected cell and can compensate for reduction in the threshold voltage of the not-selected cell by a drain coupling depending on a drain voltage supplied to bit lines of a selected cell. Thus, the present invention can reduce the chip size and improve the program speed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile