The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Mar. 17, 2000
Akira Watanabe, Tokyo, JP;
Akihiko Nara, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A line-and-space type first pattern and a roughly rectangular second pattern are joined in a rough comb shape to prepare a joint pattern. The first pattern is constituted of a plurality of line patterns each having a width along the direction of its shorter side set to a dimension that does not allow separation/resolution in the field of view of an optical length measuring machine. The second pattern has external dimensions that allow separation/resolution in the field of view of the optical length measuring machine. Such joint patterns are positioned over a distance that allows separation/resolution in the field of view of the optical length measuring machine from each other with the line portions of the first patterns extending outward and achieving a symmetrical positional relationship with together. This pattern is then transferred and formed onto a wafer using a stepper. In the resulting pattern, the outer edges of the line-and-space portions achieve a linear shape, and measurement using the optical length measuring machine is enabled to make it possible to evaluate aberration components. In addition, since the front end of a line-and-space portion undergoes changes in shape sensitively in response to changes in the exposure condition and aberrations, a measurement method with a high degree of sensitivity is achieved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile