The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Mar. 07, 2000
Applicant:
Inventors:

Yoshihisa Yamazaki, Minamiashigara, JP;

Yoshiyuki Ono, Minamiashigara, JP;

Hokuto Takada, Minamiashigara, JP;

Katsuhiro Sato, Minamiashigara, JP;

Akira Imai, Minamiashigara, JP;

Hidekazu Hirose, Minaminashigara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 5/120 ;
U.S. Cl.
CPC ...
H01L 5/120 ;
Abstract

A semiconductor device having laminated successively a porous semiconductor layer, an inorganic semiconductor layer, and optionally an organic substance layer formed therebetween is disclosed. The semiconductor device is produced by immersing a porous semiconductor layer or a semiconductor layer having an organic substance layer on the surface thereof in a solution containing the elements constituting an inorganic semiconductor or compounds of the elements and forming the inorganic semiconductor layer on the porous semiconductor layer or the organic substance layer in the solution.


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