The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Dec. 20, 2001
Byoung H. Lee, Wappingers Falls, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Ghavam G. Shahidi, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A dual work function CMOS metal gate device provides a composite metal gate electrode structure. The composite metal gate structure includes a bulk metal and a thin metal layer having an appropriate work function for the transistor type and desired threshold voltage, V . Both N-channel and P-channel transistors are formed to have distinct threshold voltages by incorporating the metal material having the appropriate work function for the desired V into the composite metal gate electrode. The two different electrodes of the N-channel and P-channel transistors are electrically connected by means of the bulk metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile