The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Apr. 03, 2002
Applicant:
Inventor:
Jinn-Nan Kao, Hsinchu, TW;
Assignee:
Holtek Semiconductor Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 3/1113 ;
Abstract
The present invention discloses a double access path mask read-only memory cell array structure, characterized in that the stored data is accessed simultaneously through two access paths disposed on both sides of a memory cell array structure. The reliability is improved since the value 0 or 1 stored in the data can be accessed through two paths and the operation speed is enhanced since the resistance in the conductive path from the sense amplifier to the ground is effectively reduced when accessing 0.
Quick Actions:
Kao, Jinn-Nan. (2003). Double access path mask rom cell structure (U.S. Patent No. 6653692). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6653692
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile