The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Apr. 12, 2002
Applicant:
Inventors:

Sébastien Laville, Grenoble, FR;

Serge Pontarollo, St. Martin le Vinoux, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
U.S. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
Abstract

An integrated circuit includes an adjustment resistor, and at least one control transistor connected to a first voltage reference. An adjustment element is connected in parallel with the adjustment resistor for adjusting a combined electrical resistance of the adjustment element and the resistor. The adjustment element is connected to the control transistor, and includes a substrate, and a MOS transistor having a source, a drain, and a gate on the substrate. The MOS transistor defines a parasitic bipolar transistor with the substrate. The adjustment element further includes a first resistor connected between the substrate and the source, and a second resistor is connected between the substrate and the drain. A diode is connected in series with the second resistor between the substrate and the drain. The gate and the source of the MOS transistor are connected together with the MOS transistor being broken down so that the adjustable element forms an electrical resistance.


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