The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Sep. 24, 2001
Applicant:
Inventor:
Keiji Takaoka, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Toyko, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/926 ; H01L 2/715 ; H01L 3/112 ; H01L 3/300 ; H01L 2/922 ; H01L 2/9227 ; H01L 2/924 ; H01L 2/920 ; H01L 3/10304 ; H01L 2/358 ; H01S 5/00 ;
U.S. Cl.
CPC ...
H01L 2/926 ; H01L 2/715 ; H01L 3/112 ; H01L 3/300 ; H01L 2/922 ; H01L 2/9227 ; H01L 2/924 ; H01L 2/920 ; H01L 3/10304 ; H01L 2/358 ; H01S 5/00 ;
Abstract
A vertical cavity-type semiconductor light-emitting device comprises a first semiconductor distributed Bragg reflector type mirror formed on a substrate, a first semiconductor layer formed on the first semiconductor distributed Bragg reflector type mirror and including at least an active layer which becomes an emission layer, a second semiconductor distributed Bragg reflector type mirror formed on the first semiconductor layer and including Al as a configuration element, and a second semiconductor layer including In Ga P (0≦x≦1) layer provided on the second semiconductor distributed Bragg reflector type mirror.