The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Jan. 30, 2002
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Methods of forming high-density contacts are provided. An interlayer insulating layer and an auxiliary layer having interconnection line patterns are sequentially formed on a substrate in which a conductive region is formed. Next, a contact photoresist pattern having a bar-shaped pattern is formed on the auxiliary layer. The bar-shaped pattern is substantially orthogonal to the interconnection line pattern formed in the auxiliary layer. Then, the interlayer insulating layer is etched at a contact region using the contact photoresist pattern and the auxiliary layer having the interconnection line pattern therein as an etching mask. Subsequently, the interlayer insulating layer is etched using the auxiliary layer having the interconnection line pattern as an etching mask to form a contact hole that extends through the interlayer insulating layer to the conductive region and to form an interconnection groove in an upper portion of the interlayer insulating layer.